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Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=-0.5A VCB=10V, f=1MHz 2SD2558 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MHz 16.2 B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2558 200 200 6 5 2 60(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Series Regulator and General Purpose (Ta=25C) Unit External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 A 23.00.3 V 9.50.2 mA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1 3.3 0.8 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 5 IB = 1 .0 2 m 50 A VCE( sat ) - IB Characteristics (Typical) I C - V BE Temperature Characteristics (Typical) 5 (VCE=4V) A 50 mA 10 mA 4 Collector Current I C( A) 3 1 .2 m A Collector Current I C( A) 2.5 mA 4 3 em p) mp) (Cas (C 0 .3 m 1 as A 0 0 2 4 6 0 0 1 25C 1 -30C (C 12 5C ase Tem 2 2 eT e Te p) 0 .6 m A 2 2.5 Collector-Emitter Voltage V C E( V) Base-Emittor Voltage V B E( V) (VCE=5V) 8000 5000 DC C urrent G ain h FE C 125 C 25 -30 C j - a( C/W) hFE - I C Characteristics (Typical) hFE - I C Temperature Characteristics (Typical) j-a - t Characteristics 5.0 1000 500 Transient Thermal Resistance 100 50 1.0 0.5 0.3 10 5 0.02 0.1 0.5 1 5 1 5 10 50 100 Time t(ms) 500 1000 2000 Collector Current I C( A) fT - IE Characteristics (Typical) 30 Safe Operating Area (Single Pulse) 60 P c - T a Derating 10 Collector Curre nt I C( A) 5 Maxim um Power Dissip ation P C( W) 40 1 0.5 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 300 20 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 3.0 1m s W ith In fin ite he at si nk 157 |
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